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| TetraFET D1029UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W - 28V - 175MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I N M O J K * SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4 * LOW Crss * SIMPLE BIAS CIRCUITS Inches 0.75 0.424 45 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 * LOW NOISE * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 438W 70V 20V 35A -65 to 150C 200C D1029UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 350W VDS = 28V f = 175MHz IDQ = 2A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 7A 1 5.6 13 65 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ. Max. Unit V 7 7 7 mA mA V S dB % -- TOTAL DEVICE h VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V 420 210 17.5 pF pF pF Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 0.4C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 D1029UK 3RXW : *DLQ G% 3RXW : 'UDLQ(IILFLHQF\ I 0+] ,GT $ 9GV 9 3LQ: 3RXW JDLQ I 0+] ,GT $ 9GV 9 3LQ: 3RXW 'UDLQ(IILFLHQF\ Figure 1 Output Power and Gain vs. Input Power Figure 2 Output Power and Efficiency vs. Input Power ,0' G%F OPTIMUM SOURCE AND LOAD IMPEDANCE 9GV 9 ,GT $ I 0+] I 0+] 3RXW:3(3 Frequency MHz 175 225 ZS W ZL W 2.1 + j1.9 1.8 - j0.5 2.8 + j2.4 2.9 + j0.7 Figure 3 IMD3 vs. Output Power Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 D1029UK L2 G a te -B ia s 100n T2 1n 10k 100k L1 D 1029U K 12 1n T4 680pF 1n 100n 1000u 28V 820K T6 T1 1u 90pF 2 -1 8 p F 47pF 2 -1 8 p F 680pF 1u T3 D 1029U K T5 175MHz Test Fixture T1, 2, 3, T4,5 T6 L1 L2 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1 2 hole core 14cm Storm Products EXE18 19/30 S1TW coaxial cable 11cm Storm Products EXE18 19/30 S1TW coaxial cable 6 turns 1.2mm dia wire, 5mm internal diameter 1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 |
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